page . 1 june 03, 2010-rev.01 pjp24n10 / PJF24N10 fea tures ? r ds(on) , v gs @10v,i ds @30a=24m ? low on resistance ? excellent gate charge x r ds(on) product ( fom ) ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de signed f or ac ada pter , high-frequency switch and synchronous rectification ? component are in compliance with eu rohs 2002/95/ec directives mechanical da ta ? ca se: t o-220ab / it o-220ab molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 100v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note: 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice gate drain source to-220ab / ito-220ab to-220ab ito-220ab internal schematic diagram 1 2 3 g d s 1 2 3 g d s type marking package packing pjp24n10 p24n10 to-220ab 50pcs/tube pjf 24n10 f24n10 ito-220ab 50pcs/tube pa ra m e te r s ym b o l p j p 2 4 n1 0 p j f 2 4 n1 0 uni ts d r a i n- s o ur c e vo lta g e v d s 1 0 0 v ga t e - s o ur c e vo lta g e v gs + 2 0 v c o nti nuo us d ra i n c ur re nt i d 4 2 4 2 a p uls e d d r a i n c urr e nt 1 ) i d m 1 6 0 1 6 0 a m a xi m um p o we r d i s s i p a ti o n d e ra ti ng f a c to r t a =2 5 o c p d 8 9 0 .7 1 3 2 0 .4 2 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c ava lanche energy with single pulse i as =17a, vdd=80v, l=4.7m e a s 6 8 0 m j ju nction-to-case thermal resistance r j c 1 . 4 3 .8 o c /w jun ction-to ambient thermal resistance r j a 6 2 .5 1 0 0 o c /w
page . 2 june 03, 2010-rev.01 pjp24n10 / PJF24N10 electrical characteristics ( t a =25 o c unless otherwise noted ) note: plus te st : pluse w idth < 300us, duty cycle < 2%. v dd v out v in r g r l switching test circuit gate charge test circuit v dd v gs r g r l 1ma p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 1 0 0 - - v ga te thre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 2 .0 - 4 .0 v d r a i n- s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 3 0 a - 18.6 24 m w ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds = 8 0v, v gs =0v - - 1 ua gate body leakage i gs s v gs =+ 2 0 v, v d s =0 v - - + 1 0 0 n a dynamic to ta l ga te c ha r g e q g v d s = 5 0 v, i d =3 0 a , v gs =1 0 v - 6 0 .6 7 8 nc ga t e - s o ur c e c ha rg e q g s - 8 .2 - ga te - d r a i n c ha r g e q g d - 21.4 - tur n- on d e la y ti me t d (o n) v dd =50v , i d = 1a v gs =1 0 v, r g =1.6 w - 18.4 26 ns tur n- on ri s e ti m e t r - 9.2 12 tur n- off d e la y ti me t d (o ff) - 5 6 6 8 tur n- off f a ll ti m e t f - 1 8 .8 2 6 inp ut c a p a c i ta nc e c i s s v d s = 5 0 v, v gs =0 v f=1 . 0 mh z - 1 4 5 0 3 2 0 0 p f out p ut c a p a c i t a nc e c o s s - 155 200 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 110 165 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 4 2 a d i o d e f o r wa r d vo lta g e v s d i s = 3 0 a , v gs =0 v - - 1 .3 v
fig.1 output characteristric pjp24n10 / PJF24N10 typical characteristics curves ( ta=25 , u nless otherwise noted) fig.2 transfer characteristric 0 20 40 6 0 8 0 100 2 3 4 5 6 7 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =10v t j = 125 o c 25 o c -55 o c 0 10 20 3 0 4 0 50 0 20 40 60 80 r ds(on) - on resistance(m ) i d - drain current (a) v gs = 10v v gs =6.5v 0 20 40 6 0 8 0 100 4 5 6 7 8 9 10 r ds(on) - on resistance(m ) v gs - gate-to-source voltage (v) i d =30a t j =25 o c t j =125 o c 0 20 40 6 0 8 0 100 0 3 6 9 12 15 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) 4.5 v v gs =10v~7v 5 . 0v 6.0v fig.1 output characteristric pjp24n10 / PJF24N10 typical characteristics curves ( ta=25 , u nless otherwise noted) fig.2 transfer characteristric fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage june 03, 2010-rev.0 1 fig.5 on resistance vs junction temperature fig.6 capacitance pag e . 3 0 1000 2 000 3000 4000 5000 0 10 20 30 40 50 c - capacitance (pf) v ds - drain-to-source voltage (v) c f = 1mhz v gs = 0 v c c ciss crs s coss 0.6 0.8 1 1. 2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) v gs =10 v i d = 3 0a 0 20 40 6 0 8 0 100 2 3 4 5 6 7 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =10v t j = 125 o c 25 o c -55 o c 0 10 20 3 0 4 0 50 0 20 40 60 80 r ds(on) - on resistance(m ) i d - drain current (a) v gs = 10v v gs =6.5v 0 20 40 6 0 8 0 100 4 5 6 7 8 9 10 r ds(on) - on resistance(m ) v gs - gate-to-source voltage (v) i d =30a t j =25 o c t j =125 o c 0 20 40 6 0 8 0 100 0 3 6 9 12 15 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) 4.5 v v gs =10v~7v 5 . 0v 6.0v
fig. 7 gate charge waveform pjp24n10 / PJF24N10 typical characteristics curves ( ta=25 , u nless otherwise noted) fig.8 source-drain diode forward voltage 0.6 0.7 0 . 8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 v th - g-s threshold voltage(normalized) t j - junction temperature ( o c) i d = 250 a 0.01 0.1 1 1 0 1 00 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v -55 o c 0 2 4 6 8 10 0 1 0 20 30 40 50 60 v gs - gate-to-source voltage (v) q g - gate charge (nc) v ds =50v i d = 3 0a fig. 7 gate charge waveform pjp24n10 / PJF24N10 typical characteristics curves ( ta=25 , u nless otherwise noted) fig.8 source-drain diode forward voltage fig.9 breakdown voltage vs junction temperature june 03, 2010-rev.0 1 page. 4 0.6 0.7 0 . 8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 v th - g-s threshold voltage(normalized) t j - junction temperature ( o c) i d = 250 a 0.01 0.1 1 1 0 1 00 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v -55 o c 0 2 4 6 8 10 0 1 0 20 30 40 50 60 v gs - gate-to-source voltage (v) q g - gate charge (nc) v ds =50v i d = 3 0a
page . 5 june 03, 2010-rev.01 pjp24n10 / PJF24N10 copyright panjit international, inc 2010 the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement
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